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| Power F-MOS FETs 2SK3045 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 15.6mJ q VGSS = 30V guaranteed q High-speed switching: tf = 35ns q No secondary breakdown unit: mm 9.90.3 4.60.2 2.90.2 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 15.00.5 3.20.1 13.70.2 4.20.2 1.40.2 1.60.2 0.80.1 3.00.5 2.60.1 0.550.15 s Absolute Maximum Ratings (TC = 25C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 500 30 2.5 10 15.6 30 2 150 -55 to +150 Unit V V A A mJ W C C 1 2 2.540.3 3 5.080.5 1: Gate 2: Drain 3: Source TO-220D Package Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature * TC = 25C Ta = 25C L = 5mH, IL = 2.5A, VDD = 50V, 1 pulse s Electrical Characteristics (TC = 25C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Coss td(on) tr td(off) tf VGS = 10V, ID = 1.5A VDD = 150V, RL = 100 Conditions VDS = 400V, VGS = 0 VGS = 30V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 1.5A VDS = 25V, ID = 1.5A IDR = 2.5A, VGS = 0 330 VDS = 20V, VGS = 0, f = 1MHz 55 20 15 25 55 30 1 500 2 3.2 1.5 -1.5 5 4 min typ max 0.1 1 Unit mA A V V S V pF pF pF ns ns ns ns Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time (delay time) Rise time Turn-off time (delay time) Fall time 1 Power F-MOS FETs Area of safe operation (ASO) 100 30 10 3 1 0.3 0.1 0.03 0.01 1 3 10 30 100 300 1000 DC 10ms 100ms 60 2SK3045 PD Ta 24 EAS Tj Avalanche energy capacity EAS (mJ) VDD=50V ID=2.5A 20 Allowable power dissipation PD (W) Non repetitive pulse TC=25C (1) TC=Ta (2) Without heat sink 50 Drain current ID (A) t=10s 100s 1ms 40 16 30 (1) 20 12 8 10 (2) 0 0 20 40 60 80 100 120 140 160 4 0 25 50 75 100 125 150 175 Drain to source voltage VDS (V) Ambient temperature Ta (C) Junction temperature Tj (C) ID VDS 4.0 TC=25C 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 10 20 30 40 50 60 6V VGS=10V 7V 6.5V 4 5 ID VGS 6 VDS=25V Vth TC VDS=25V ID=1mA 5 Drain current ID (A) Drain current ID (A) TC=0C 25C 3 150C 100C Gate threshold voltage Vth (V) 12 4 3 2 2 40W 5.5V 5V 1 1 0 0 2 4 6 8 10 0 0 25 50 75 100 125 150 Drain to source voltage VDS (V) Gate to source voltage VGS (V) Case temperature TC (C) RDS(on) ID Drain to source ON-resistance RDS(on) () 12 3.0 | Yfs | ID 100 VDS=25V TC=25C IDR VDSF VGS=0 TC=25C Forward transfer admittance |Yfs| (S) VGS=10V 10 Drain reverse current IDR (A) 0 1 2 3 4 5 2.5 10 8 TC=150C 6 100C 2.0 1.5 1 4 25C 0C 1.0 0.1 2 0.5 0 0 1 2 3 4 5 0 0.01 0 0.5 1.0 1.5 2.0 Drain current ID (A) Drain current ID (A) Diode forward voltage VDSF (V) 2 Power F-MOS FETs Ciss, Coss, Crss VDS Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 10000 f=1MHz TC=25C 2SK3045 VDS, VGS Qg 400 16 14 250V 12 10 8 VGS 6 4 2 VDS 0 24 150 td(on), tr, tf, td(off) ID VDD=150V VGS=10V TC=25C Drain to source voltage VDS (V) VDS=150V Gate to source voltage VGS (V) 350 300 250 200 150 100 50 0 0 4 8 Switching time td(on),tr,tf,td(off) (ns) 125 1000 Ciss 100 100 td(off) 75 Coss 10 Crss 50 tf tr td(on) 25 1 0 50 100 150 200 250 0 0 0.5 1.0 1.5 2.0 2.5 3.0 12 16 20 Drain to source voltage VDS (V) Gate charge amount Qg (nC) Drain current ID (A) Rth(t) t 102 (1) Without heat sink (2) With a 100 x 100 x 2mm Al heat sink (1) Thermal resistance Rth(t) (C/W) 10 (2) 1 10-1 10-2 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR |
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